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Volumn , Issue , 2006, Pages 17-22

Active and passive RF device compact modeling in CMOS technoloies

Author keywords

Analytical thermal noise modeling; Macro modeling; Non quasi static effect; RF MOSFET modeling; Substrate resistance; Three port measurement

Indexed keywords

ELECTRIC INDUCTORS; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; THERMAL NOISE;

EID: 42549088704     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282828     Document Type: Conference Paper
Times cited : (2)

References (10)
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    • S. D. Wu, G. W. Huang, K. M. Chen, C. Y. Chang, H. C. Tseng, and T. L. Hsu, "Extraction of Substrate Parameters for RF MOSFETs Based on Four-Port Measurement," IEEE Microwave and Wireless Components Lett., vol. 15, no. 6, pp. 437-439, Jun. 2005.K. Elissa, "Title of paper if known," unpublished.
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    • Analytical Model-ing of MOSFETs Channel Noise and Noise Parameters
    • S. Asgaran, M. J. Deen, and C. H. Chen, "Analytical Model-ing of MOSFETs Channel Noise and Noise Parameters," IEEE Trans. Electron Devices, vol. 51, pp. 2109-2114, 2004.
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    • An efficient method for computer aided noise analysis of linear amplifier networks
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.