Degradation of avalanche ruggedness of power diodes by thermally induced local breakdown

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2006, Pages

  Kim, Soo Seong ^a   Oh, Kwang Hoon ^a   Kim, Young Chul ^a   Yun, Chong Man ^a  

^a Fairchild Korea Semiconductor Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; IONIZATION; SWITCHING;

AVALANCHE CURRENT; UNDAMPED INDUCTIVE LOAD SWITCHING (UIS);

AVALANCHE DIODES;

EID: 42449114054     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2006.1711875     Document Type: Conference Paper

References (6)

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2. A. Kopta and M. Rahimo, "The Field Charge Extraction (FCE) Diode A Novel Technology for Soft Recovery High Voltage Diodes", ISPSD2005, pp. 83-86, 2005
3. Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino and T.Yamada, "An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dlrr/dt condition", ISPSD96, pp.353-356, 1996
4. G. A. M. Hurkx and N. Koper, "A Physics-Based Model for the Avalanche Ruggedness of Power Diodes", ISPSD99, pp. 169-172, 1999
5. B. Heinze, H. P. Felsl, A. Mauder, H. J. Schulze and J. Lutz, "Influence of Buffer Structures on Static and Dynamic Ruggedness of High Voltage FWDs", ISPSD2005, pp.215-218, 2005.
6. Medici Two-Dimensional Device Simulation Program User's Manual, Synopsis, 2004.