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Volumn , Issue , 2006, Pages

Optimum combination of SiC-diodes and Si-switching devices in high power application

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIODES; SWITCHING;

EID: 42449101794     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2006.1711877     Document Type: Conference Paper
Times cited : (9)

References (15)
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    • (2005) Proc , vol.1 , pp. 11-17
    • Zolper, J.C.1
  • 7
    • 42449160071 scopus 로고    scopus 로고
    • Hard Switched Silicon IGBTs' Cut Switching Losses in Half with Silicon Carbide Schottky Diodes, CREE Inc. Home Page
    • J. Richmond, "Hard Switched Silicon IGBTs' Cut Switching Losses in Half with Silicon Carbide Schottky Diodes", CREE Inc. Home Page, Application Notes.
    • Application Notes
    • Richmond, J.1
  • 8
    • 0034502036 scopus 로고    scopus 로고
    • Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications
    • Annu. Mtg
    • A. Hefner, Jr., D. Berning, J. S. Lai, C. Liu, and R. Singh, "Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications," in Proc. IEEE Industry Applications Society (IAS), Annu. Mtg., 2000, pp.2948-2954.
    • (2000) Proc. IEEE Industry Applications Society (IAS) , pp. 2948-2954
    • Hefner Jr., A.1    Berning, D.2    Lai, J.S.3    Liu, C.4    Singh, R.5
  • 9
    • 0036713884 scopus 로고    scopus 로고
    • Characterization of Hard- and Soft-Switching Performance of High-Voltage Si and 4H-SiC PiN Diodes
    • Sept
    • K. Shenai, M. Trivedi, and G. Neudeck, "Characterization of Hard- and Soft-Switching Performance of High-Voltage Si and 4H-SiC PiN Diodes," IEEE Trans. Electron Devices, Vol. 49, No. 9, pp.1648-1656, Sept. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.9 , pp. 1648-1656
    • Shenai, K.1    Trivedi, M.2    Neudeck, G.3
  • 11
    • 8744282394 scopus 로고    scopus 로고
    • Comparison of Silicon and Silicon Carbide Semiconductors for a 10 kV Switching Application
    • C. M. Johnson, "Comparison of Silicon and Silicon Carbide Semiconductors for a 10 kV Switching Application," in Proc. IEEE Power Electronics Specialists Conf.(PESC), 2004, pp.572-578.
    • (2004) Proc. IEEE Power Electronics Specialists Conf.(PESC) , pp. 572-578
    • Johnson, C.M.1
  • 12
    • 33749507242 scopus 로고    scopus 로고
    • A Study on Switching Frequency Limitation of High Voltage Power Converters in Combination of Si-IEGT and SiC-PiN Diode
    • K-M. Sung, K. Suzuki, Y. Tanaka, T. Ogura, and H. Ohashi, "A Study on Switching Frequency Limitation of High Voltage Power Converters in Combination of Si-IEGT and SiC-PiN Diode," in Proc. IEEE Applied Power Electronics Conf. (APEC), 2006, pp. 455-459
    • (2006) Proc. IEEE Applied Power Electronics Conf. (APEC) , pp. 455-459
    • Sung, K.-M.1    Suzuki, K.2    Tanaka, Y.3    Ogura, T.4    Ohashi, H.5
  • 13
    • 13444288168 scopus 로고    scopus 로고
    • A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sub 2/ 4H-SiC Schottky-Barrier Diode Using Mo Contact Annealed at High Temperature
    • February
    • T. Nakamura, T. Miyanagi, I. Kamata, T. Jikimoto, and H. Tsuchida, "A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sub 2/ 4H-SiC Schottky-Barrier Diode Using Mo Contact Annealed at High Temperature", IEEE Trans. Electron Devices Letters, Vol. 26, No. 2, pp. 99-101, February 2005.
    • (2005) IEEE Trans. Electron Devices Letters , vol.26 , Issue.2 , pp. 99-101
    • Nakamura, T.1    Miyanagi, T.2    Kamata, I.3    Jikimoto, T.4    Tsuchida, H.5
  • 14
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    • H. Matsuda, New Advanced Power Semiconductors, in Proc. PCIM, 1998, pp139-144.
    • H. Matsuda, "New Advanced Power Semiconductors," in Proc. PCIM, 1998, pp139-144.
  • 15
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    • I. Omura, T. Ogura, K. Sugiyama, and H. Ohashi, Carrier injection enhancement effect of high voltage MOS devices-Device physics and design concept-, in Proc. ISPSD, 1997, pp217-220.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.