Improved 3.5 kV IGBT-diode chipset and 800A module applications

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 1996, Pages 1748-1753

  Brunner, Heinrich ^a   Bruckmann, Martin ^a   Hierholzer, Martin ^a   Laska, Thomas ^a   Porst, Alfred ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC LOSSES; ELECTRIC VARIABLES MEASUREMENT; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SHORT CIRCUIT CURRENTS;

COLLECTOR EMITTER VOLTAGE; SATURATION VOLTAGE; SWITCHING LOSSES;

BIPOLAR TRANSISTORS;

EID: 0029727159     PISSN: 02759306     EISSN: None     Source Type: None    
DOI: 10.1109/PESC.1996.548817     Document Type: Conference Paper

References (10)

1. H. Brunner M. Hierholzer T. Laska A. Porst R. Spanke 3300V IGBT Module for Traction Application Proceedings of the 6th EPE Conference 1.056 1.059 Proceedings of the 6th EPE Conference
2. M. Hiyoshi A 1000A 2500V Pressure Mount RC-IGBT Proceedings of the 6th EPE Conference 1.051 1.055 Proceedings of the 6th EPE Conference
3. Y. Seki Power Pack IGBT: High Power (2.5kV, 1kA) RC-IGBT with Highly Reliable Flat Package Proceedings of the 6th EPE Conference Proceedings of the 6th EPE Conference
4. E. Spenke pn-Übergänge 1979 Berlin-Heidelberg-New York
5. D. A. Kleinmann The Forward Characteristic of the PIN Diode The Bell System Technical Journal 685 706 May 1956
6. B. J. Baliga Modern Power Devices 1987 John Wiley & Sons New York
7. T. Laska A. Porst H. Brunner W. Kiffe A Low Loss/Highly Rugged IGBT-Generation Based on a Self Aligned Process with Double Implanted n/n+-Emitter Proceedings of the ISPSD 171 175 Proceedings of the ISPSD 1994
8. Medici users manual 1992 Technology Modeling Associates
9. H. Brunner T. Laska A. Porst IGBT Cell Optimization with Simulation and Comparison with Measurements Proceedings of the 6th EPE Conference 1.167 1.170 Proceedings of the 6th EPE Conference
10. H. Brunner Electrothermal Simulation of the IGBT Latchup Behavior SISDEP Proceedings 45 48 SISDEP Proceedings 1993