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Volumn 67, Issue 7, 2003, Pages

Strong localization of carriers in δ-doped GaAs structures

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

EID: 4244215810     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.075309     Document Type: Article
Times cited : (15)

References (19)
  • 1
    • 85038917319 scopus 로고    scopus 로고
    • N. F. Mott, (Taylor & Francis, London, 1990)
    • N. F. Mott, Metal-Insulator Transitions (Taylor & Francis, London, 1990).
  • 6
    • 85038966829 scopus 로고    scopus 로고
    • E. F. Schubert, (Academic, Boston, 1994) 40, Chap. 1
    • E. F. Schubert, Semiconductors and Semimetals, (Academic, Boston, 1994) Vol. 40, Chap. 1.
  • 9
    • 85038949192 scopus 로고    scopus 로고
    • D. C. Look, in, 3rd ed., edited by M. R. Bronzel and G. E. Stillman (INSPEC, London, 1996) p. 684
    • D. C. Look, in Properties of Gallium Arsenide, 3rd ed., edited by M. R. Bronzel and G. E. Stillman (INSPEC, London, 1996) p. 684.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.