New structural model for the Si(111)4 x 1-In reconstruction

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 96-100

  Saranin, A A ^a,b,c   Zotov, A V ^a,b,d   Ignatovich, K V ^b   Lifshits, V G ^b   Numata, T ^a   Kubo, O ^a   Tani, H ^a   Katayama, M ^a   Oura, K ^a  

^a OSAKA UNIVERSITY   (Japan)

^b INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^c FAR EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^d VLADIVOSTOK STATE UNIVERSITY OF ECONOMICS AND SERVICE   (Russian Federation)

Author keywords

Atom solid interactions; Auger electron spectroscopy (AES); Indium; Low energy electron diffraction (LEED); Scanning tunnelling microscopy (STM); Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; INDIUM; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR STRUCTURE; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICE MODELS; STACKING FAULTS; SURFACE ROUGHNESS;

ATOM SOLID INTERACTIONS; SURFACE RECONSTRUCTION; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 4244059561     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00032-4     Document Type: Article

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