Initial stages of al growth from dimethylaluminum hydride on silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 12, 1999, Pages 8123-8127

  Mitsui, Toshiyuki ^a   Hill, Eric ^a   Curtis, Robert ^a   Ganz, Eric ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243940622     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.8123     Document Type: Article

References (31)

1. The Chemistry of Metal CVD, edited by T. Kodas and M. Hampden-Smith (VCH, Weinheim, 1994).
2. K. A. Littau, R. Mosely, S. Zhou, H. Zhang, and T. Guo, Microelectron. Eng. 33, 101 (1997).
3. K. Tsubouchi and K. Masu, J. Vac. Sci. Technol. A 10, 856 (1992).
4. Y. Wang, M. J. Bronikowski, and R. J. Hamers, Surf. Sci. 348, 311 (1996).
5. Y. Wang, M. J. Bronikowski, and R. J. Hamers, Surf. Sci. 311, 64 (1994).
6. Y. Wang, M. J. Bronikowski, and R. J. Hamers, J. Phys. Chem. 98, 5966 (1994).
7. J. Nogami, S. I. Park, and C. F. Quate, Appl. Phys. Lett. 53, 2086 (1988).
8. H. Itoh, J. Itoh, A. Schmid, and T. Ichinokawa, Phys. Rev. B 48, 14 663 (1993).
9. C. Zhu, S. Misawa, S. Tsukahara, and S. Fujiwara, Surf. Sci. 357/358, 926 (1996).
10. J. Nogami, A. A. Baski, and C. F. Quate, Phys. Rev. B 44, 1415 (1991).
11. R. Curtis, T. Mitsui, and E. Ganz, Rev. Sci. Instrum. 68, 2790 (1997).
12. T. Wartik and H. I. Schlesinger, J. Am. Chem. Soc. 75, 835 (1953).
13. B. C. Stipe, M. A. Razaei, and W. Ho, J. Chem. Phys. 107, 6443 (1997).
14. Y. Hiraoka and M. Mashita, J. Cryst. Growth 145, 473 (1994).
15. J. J. Boland, Adv. Phys. 42, No. 2, 129 (1993).
16. These images are slightly distorted due to an unusual tip state.
17. Figures 33(c)–33(e) are further complicated by the presence of other DMAH fragments, possibly H or (Formula presented) which image dark relative to the Si surface.
18. To insure that the tip did not deposit the Al atoms observed, we have pulsed the tip over clean surface regions, defects, and step edges. No Al features were observed in any of these cases.
19. G. Brocks, P. J. Kelly, and R. Car, J. Vac. Sci. Technol. B 12, 2705 (1994).
20. The reader may note the strange appearance of the F configuration in this image. At -2 V sample bias, the bright spot of the feature flips about the adjoining dark dimer. One flips during the scan in this image.
21. In order to identify the features produced by hydrogen on the DMAH dosed Si(001) surface, we dosed atomic hydrogen on the clean surface in the fashion of Boland and compared STM images of these two surfaces taken over the full range of sample biases between ±3 V. [J. J. Boland, Phys. Rev. Lett. 65, 3325 (1990).]
22. The features we identify with H in this paper were identical to those found on the H dosed surface. Similarly, comparison with images from H studies by other groups supported our identification. [X. D. Wang, H. Lu, T. Hashizume, H. W. Pickering, and T. Sakurai, Appl. Surf. Sci. 67, 266 (1993); and
23. T. Uchiyama and M. Tsukada, J. Vac. Sci. Technol. B 12, 2205 (1994).]
24. The Al monomer is mobile on the (Formula presented) Si(001) surface at room temperature (Ref. 19). However, we believe that the Al monomer can become trapped at a C-type defect.
25. A. J. Mayne, A. R. Avery, J. Knall, T. S. Jones, G. A. G. Briggs, and W. H. Weinberg, Surf. Sci. 284, 247 (1993).
26. A. J. Dyson and P. V. Smith, Surf. Sci. 375, 45 (1997).
27. M. J. Bronikowski and R. J. Hamers, J. Vac. Sci. Technol. A 13, 777 (1995).
28. Unfortunately, H and single (Formula presented) features could not be distinguished under the imaging conditions used.
29. M. L. Colaianni, P. J. Chen, H. Gutleben, and J. T. Yates, Chem. Phys. Lett. 191, 179 (1992).
30. L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, and T. Sakurai, Phys. Rev. B 56, 4648 (1997).
31. C. Pearson, B. Borovsky, M. Krueger, R. Curtis, and E. Ganz, Phys. Rev. Lett. 74, 2710 (1995).