Growth kinetics of aluminum on the Si(100) surface studied by scanning tunneling microscopy

Surface Science

Volumn 357-358, Issue , 1996, Pages 926-930

  Zhu, Changxin ^a   Misawa, Shunji ^a   Tsukahara, Sonoko ^a   Fujiwara, Shiro ^a  

^a ULVAC INC   (Japan)

Author keywords

Adatoms; Aluminum; Diffusion and migration; Growth; Low index single crystal surfaces; Nucleation; Scanning tunneling microscopy; Silicon; Surface diffusion

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; DIFFUSION IN SOLIDS; EVAPORATION; NUCLEATION; PROBABILITY; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE PHENOMENA;

ADATOMS; ADSORPTION ENERGY; ISLAND NUMBER DENSITY; KINETIC PROCESSES; PROBABILITY ANALYSIS METHOD; SUBSTRATE TEMPERATURE; SURFACE DIFFUSION;

GROWTH (MATERIALS);

EID: 0030165308     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00293-2     Document Type: Article

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