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Volumn 59, Issue 8, 1999, Pages 5799-5805

Intrinsic electric fields and raman spectra of iii-v nitride wurtzite semiconductor heterostructures

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Indexed keywords


EID: 4243746099     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.5799     Document Type: Article
Times cited : (4)

References (28)
  • 7
    • 85038281949 scopus 로고    scopus 로고
    • Properties of Group III Nitrides, edited by J. H. Edgar (Inspec, London, 1988), Chap. 8
    • Properties of Group III Nitrides, edited by J. H. Edgar (Inspec, London, 1988), Chap. 8.
  • 8
    • 85038326564 scopus 로고    scopus 로고
    • H. Siegle, L. Filippidis, C. Kaczmarczyk, A. P. Litvinchuk, A. Hoffman, and C. Thomsen, 23rd International Conference on The Physics of Semiconductors, edited by M. Scheffler and R. Zimmerman (World Scientific, Singapore, 1996), Vol. 1, p. 539
    • H. Siegle, L. Filippidis, C. Kaczmarczyk, A. P. Litvinchuk, A. Hoffman, and C. Thomsen, 23rd International Conference on The Physics of Semiconductors, edited by M. Scheffler and R. Zimmerman (World Scientific, Singapore, 1996), Vol. 1, p. 539.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.