Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Ni, X ^a   Shimada, R ^a   Leach, J H ^a   Xie, J ^a   Ozgur U ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

GaN; InGaN; Nonpolar; Photoluminescence; Quantum wells; Semipolar

Indexed keywords

(PL) PROPERTIES; A PLANE; BAND-EDGE EMISSIONS; BARRIER THICKNESS; BLUE SHIFTING; C -AXIS; CARRIER DENSITY; CHEMICAL VAPORS; EMISSION ENERGIES; EPITAXIAL LATERAL OVERGROWTH (ELOG); EXCITATION POWERS; GAN FILMS; INDUCED ELECTRIC FIELDS; INGAN/GAN; M PLANE; MULTIPLE QUANTUM WELL (MQM); MULTIPLE QUANTUM WELLS (MQWS); NITRIDE MATERIALS; NON-POLAR; OPTICAL (PET) (OPET); OPTICAL CHARACTERIZATIONS; OPTICAL INSTRUMENTATION; PHOTOLUMINESCENCE (PL) MEASUREMENTS; PLANE SAPPHIRE; POLARIZATION FIELD (PE); QUANTUM WELL STRUCTURES; QUANTUM WELLS; RED SHIFTING; SCREENING EFFECTS; SEMIPOLAR; SPATIAL SEPARATION; WELL THICKNESS; ZERO SHIFTS;

ASTROPHYSICS; CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; CIVIL AVIATION; COMPUTER NETWORKS; CUBIC BORON NITRIDE; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; INJECTION (OIL WELLS); LIGHT EMISSION; LUMINESCENCE; MAGNETISM; METALLIZING; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHOTOACOUSTIC EFFECT; PIGMENTS; POLARIZATION; SAPPHIRE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SEPARATION; SUBSTRATES; WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 42149188761     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.763260     Document Type: Conference Paper

References (9)

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