Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

Optics Express

Volumn 16, Issue 8, 2008, Pages 5199-5205

  Tawara, T ^a   Kamada, H ^a   Zhang, Y H ^a,b   Tanabe, T ^a   Cade, N I ^a   Ding, D ^b   Johnson, S R ^b   Gotoh, H ^a   Kuramochi, E ^a   Notomi, M ^a   Sogawa, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; PHOTONIC CRYSTALS; POTENTIAL ENERGY; QUALITY CONTROL;

LASING CHARACTERISTICS; NANOCAVITIES;

SEMICONDUCTOR QUANTUM DOTS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; DIODE LASER; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; PHOTON; QUALITY CONTROL; TEMPERATURE;

ARSENICALS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LASERS, SEMICONDUCTOR; NANOTECHNOLOGY; PHOTONS; QUALITY CONTROL; QUANTUM DOTS; TEMPERATURE;

EID: 42149187050     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.005199     Document Type: Article

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