Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field

Bulletin of the Russian Academy of Sciences: Physics

Volumn 72, Issue 2, 2008, Pages 212-214

  Vorobjev, L E ^a   Firsov, D A ^a   Shalygin, V A ^a   Panevin, V Yu ^a   Sofronov, A N ^a   Egorov, A Yu ^b   Ustinov, V M ^b   Gladyshev, A G ^b   Bondarenko, O V ^b   Andrianov, A V ^b   Zakhar'in, A O ^b   Kozlov, D V ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

ENERGY SPECTRA; HOLE SUBBANDS; TERAHERTZ RADIATION;

LIGHT EMISSION;

EID: 42149135381     PISSN: 10628738     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11954-008-2019-y     Document Type: Article

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