Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures

Nanotechnology

Volumn 11, Issue 4, 2000, Pages 348-350

  Aleshkin, V Ya ^a   Andreev, B A ^a   Gavrilenko, V I ^a   Erofeeva, I V ^a   Kozlov, D V ^a   Kuznetsov, O A ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CONTINUUM MECHANICS; ELECTRON RESONANCE; ELECTRON TRANSITIONS; GROUND STATE; INFRARED RADIATION; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

MULTIPLE-QUANTUM-WELLS (MQW); RESONANT ACCEPTOR STATES;

HETEROJUNCTIONS;

EID: 0034497690     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/11/4/331     Document Type: Article

References (4)

1. Altunov I V, Kagan M S, Korolev K A, Odnoblyudov M A, Sinis V P, Chitkova E G and Yassievich I N 1999 Zh. Eksp. Teor. Fiz. 115 89 (in Russian)
2. Bir G L and Pikus G E 1974 Symmetry and Strain-Induced Effects in Semiconductors (New York: Wiley)
3. Pasquarello A, Andreani L C and Buczko R 1989 Phys. Rev. B 40 5602
4. Aleshkin V Ya, Gavrilenko V I, Andreev B A, Erofeeva I V, Kozlov D V and Kuznetsov O A 2000 Fiz. Tekh. Poluprov. (Semiconductors) 34 563-7