Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Zhukavin, R Kh ^a   Tsyplenkov, V V ^a   Kovalevsky, K A ^a   Shastin, V N ^a   Pavlov, S G ^b   Bottger U ^b   Hubers H W ^b   Riemann, H ^c   Abrosimov, N V ^c   Notzel N ^c  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CARBON DIOXIDE; ELECTRONIC STRUCTURE; ENERGY GAP; LASER BEAM EFFECTS; PHOSPHORS; SILICON; STIMULATED EMISSION;

INTRACENTER TRANSITIONS; LASER STATES; LASER THRESHOLDS; UNIAXIAL STRESS;

STRESS ANALYSIS;

EID: 33846996785     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431568     Document Type: Article

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