Gate length reduction technology for pseudomorphic in0.52Al 0.48As/In0.7Ga0.3as high electron mobility transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2296-2299

  Yeon, Seong Jin ^a   Lee, Jongwon ^a   Seol, Gyungseon ^a   Seo, Kwangseok ^a  

^a Seoul National University   (South Korea)

Author keywords

Cutoff frequency; Dielectrics; E beam lithography system; Maximum saturated current; Metal filling problem; Nano HEMT; Plasmas; Pseudomorphlc high electron mobility transistor; Transconductance

Indexed keywords

ALUMINUM ALLOYS; CUTOFF FREQUENCY; ELECTROCHEMICAL ETCHING; GATE DIELECTRICS; LITHOGRAPHY; TRANSCONDUCTANCE;

E-BEAM LITHOGRAPHY SYSTEM; MAXIMUM SATURATED CURRENTS; METAL FILLING PROBLEM; PSEUDOMORPHLC HIGH-ELECTRON-MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547885089     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2296     Document Type: Article

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