High electron mobility transistors yield improvement with ultrasonically assisted recess for high-speed integrated circuits

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3376-3379

  Yeon, Seong Jin ^a   Kim, Hyungtae ^a   Lee, Jongwon ^a   Seol, Gyungseon ^a   Seo, Kwangseok ^a  

^a Seoul National University   (South Korea)

Author keywords

Electron mobility; Etchant; High speed integrated circuit; InAlAs; InGaAs; Saturation velocity; Sheet electron density; Ultrasonically assisted recess

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; ULTRASONICS;

ETCHANT; HIGH-SPEED INTEGRATED CIRCUITS; INALAS; SATURATION VELOCITY; SHEET ELECTRON DENSITY; ULTRASONICALLY ASSISTED RECESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33646914392     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3376     Document Type: Article

References (3)

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