An electrothermal model for GaInP/GaAs power HBTs with enhanced convergence capabilities

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 296-299

  Jardel, O ^a   Quere R ^a   Heckmann, S ^b   Bousbia, H ^a   Barataud, D ^a   Chattier, E ^c   Floriot, D ^c  

^a UNIVERSITY OF LIMOGES   (France)

^b United Monolithic Semiconductor   (France)

^c Alcatel Thales   (France)

Author keywords

Convergence time; Electrothermal model; GaInP GaAs power HBTs

Indexed keywords

GALLIUM COMPOUNDS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; POWER AMPLIFIERS;

CONVERGENCE TIME; ELECTROTHERMAL MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 41549154258     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282811     Document Type: Conference Paper

References (5)

1. M. Schröter and T.-Y. Lee, "HICUM - a physics-based scaleable compact bipolar transistor model", presentation to the Compact Model Council, (http://www.eigroup.org/cmc), Dec. 1998.
2. S. Heckmann, R. Sommet, J-M Nebus, J.-C. Jacquet, D. Floriot, P. Auxemery, and R. Quéré . Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design. IEEE Transactions on Microwave Theory and Techniques, Vol. 50(12):2811-2819, 2002.
3. T. Peyretaillade, M. Perez, S. Mons, R. Sommet, Ph. Auxemery, J.C. Lalaurie, and R. Quéré. A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities. In Microwave Symposium Digest, 1997, IEEE MTT-S International, volume 3, pages 1515-1518 vol.3, 1997.
4. C.Amaud, D. Barataud, J.M. Nebus, J.P. Teyssier, J.P. Villotte, and D. Floriot. An Active Pulsed RF and Pulsed DC Load-Pull System for the Characterization of HBT Power Amplifiers Used in Coherent Radar and Communication Systems, IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 12, December 2000, pp 2625-2629.
5. See http://hbt.ucsd.edu.