C k-edge NEXAFS of 6H-SiC and 3C-SiC systems

Physica Scripta T

Volumn T115, Issue , 2005, Pages 308-311

  Pedio, M ^a   Giglia, A ^a   Mahne, N ^a   Nannarone, S ^a,b   Giovannini, S ^c   Cepek, C ^a   Boscherini, F ^c   Carboni, R ^c   Benfatto, M ^d   Della Longa, S ^d,e  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d INFN LABORATORI NAZIONALI DI FRASCATI   (Italy)

^e UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION ANISOTROPIES; NEAR EDGE ABSORPTION;

ABSORPTION; MULTIPLE SCATTERING; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY;

SILICON CARBIDE;

EID: 41549138938     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1238/Physica.Topical.115a00308     Document Type: Article

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