Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy

Materials Science and Engineering A

Volumn 289, Issue 1, 2000, Pages 255-264

  Volz, K ^a   Schreiber, S ^a   Gerlach, J W ^a   Reiber, W ^a   Rauschenbach, B ^a   Stritzker, B ^a   Assmann, W ^b   Ensinger, W ^c  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF MUNICH   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; FULLERENES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FULLERENE MOLECULES; KNUDSEN CELLS;

SILICON CARBIDE;

EID: 0034272946     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)00825-X     Document Type: Article

References (11)

1. H Morkoc S Strite G.B Gao M.E Lin B Sverdlov M Burns J. Appl. Phys. 76 1994 1363
2. J.A Powell L.G Matus G.L Harris C.Y.-W Yang Amorphous and Crystalline Silicon Carbide 1988 Springer Verlag Washington, DC
3. W.J. Choyke, H. Matsunami, J. Pensl (Eds.), Fundamental Questions and Applications of SiC (part II), Vol. 162, Akademie Verlag, Berlin, 1997.
4. A.V Hamza M Balooch M Moalem Surf. Sci. 317 1994 L1129
5. S Henke B Stritzker B Rauschenbach J. Appl. Phys. 78 1995 2070
6. K Volz S Schreiber M Zeitler B Rauschenbach B Stritzker W Ensinger Surf. Coat. Technol. 120–121 1999 101
7. R Scholz U Gösele K Volz B Rauschenbach Jpn. J. Appl. Phys. 37 1998 6090
8. M. Balooch, A.V. Hamza, in: R. Ruoff, K. Kadish (Eds.), Electrochemical Society Proceedings, vol. 95/10, 1995, 163.
9. W Assmann H Huber C Steinhausen M Dobler H Glückler A Weidinger Nucl. Instrum. Methods B89 1995 131
10. A Bergmeier G Dollinger C.M Frey Nucl. Instrum. Methods B99 1995 488
11. M Kitabatake W.J Choyke H Matsunami G Pensl Silicon Carbide vol. I 1997 Akademie Verlag Berlin 405