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Volumn 383, Issue 1-2, 2001, Pages 137-142

Laser processing of amorphous silicon for large-area polysilicon imagers

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; EXCIMER LASERS; LEAKAGE CURRENTS; POLYSILICON; PULSED LASER APPLICATIONS; SUBSTRATES; THIN FILM TRANSISTORS;

EID: 0035247717     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01585-6     Document Type: Article
Times cited : (13)

References (11)
  • 3
    • 0002494773 scopus 로고    scopus 로고
    • Laser crystallization for polycrystalline silicon device applications
    • R.A. Street. Berlin: Springer-Verlag. chapter 3, and the references contained therein
    • Boyce J.B., Mei P. Laser crystallization for polycrystalline silicon device applications. Street R.A. Technology and Applications of Amorphous Silicon. Springer Series in Materials Science. 37:2000;94-146 Springer-Verlag, Berlin. chapter 3, and the references contained therein.
    • (2000) Technology and Applications of Amorphous Silicon. Springer Series in Materials Science , vol.37 , pp. 94-146
    • Boyce, J.B.1    Mei, P.2
  • 10
    • 85031523644 scopus 로고    scopus 로고
    • In: Proceedings of the 18th International Conference on Amorphous and Microcrystalline Semiconductors
    • Snowbird, UT, August (in press)
    • J.P. Lu, P. Mei, J. Rahn, J. Ho, Y. Wang, J.B. Boyce, R.A. Street, in: Proceedings of the 18th International Conference on Amorphous and Microcrystalline Semiconductors, Snowbird, UT, August 1999, J. Non-Cryst. Solids (in press).
    • (1999) J. Non-Cryst. Solids
    • Lu, J.P.1    Mei, P.2    Rahn, J.3    Ho, J.4    Wang, Y.5    Boyce, J.B.6    Street, R.A.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.