Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 570-573

  Hospodkova A ^a   Krapek V ^b   Mates, T ^a   Kuldova K ^a   Pangrac J ^a   Hulicius, E ^a   Oswald, J ^a   Melichar, K ^a   Humlicek J ^b   Simecek T ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b MASARYK UNIVERSITY   (Czech Republic)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B1. Arsenides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ARSENIDES; GROWTH RATES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846543321     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.156     Document Type: Article

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