Atomic layer epitaxy of ZnTe by isothermal closed space sublimation

Journal of Crystal Growth

Volumn 223, Issue 4, 2001, Pages 447-449

  Larramendi, E M ^a   Puron E ^a   Hernandez L C ^a   Sanchez M ^a   De Roux, S ^a   De Melo, O ^a   Romero Paredes, G ^b   Pena Sierra R ^b   Tamura, M ^b  

^a UNIVERSITY OF HAVANA   (Cuba)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; VAPOR PRESSURE; X RAYS;

ATOMIC LAYER EPITAXY; ISOTHERMAL CLOSED SPACE SUBLIMATION; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0035277310     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00648-0     Document Type: Article

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