Role of defect diffusion in the InP damage profile

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2672-2675

  Yu, D G ^a   Chen, C H ^a   Holmes Jr , A L ^a   DenBaars, S P ^a   Hu, E L ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4143111410     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589706     Document Type: Article

References (12)

1. G. F. Doughty, S. Thoms, R. Cheung, and C. D. W. Wilkinson, Proceedings of the 6th International Conference on Ion and Plasma Assisted Techniques (CEP Consultants, Edinburgh, 1987), p. 284.
2. R. Germann, A. Forchel, M. Bresch, and H. P. Meier, J. Vac. Sci. Technol. B 7, 1475 (1989).
3. O. M. Steffensen, D. Birkedal, J. Hanberg, O. Albrektsen, and S. W. Pang, J. Appl. Phys. 78, 1528 (1995).
4. D. G. Yu, C. H. Chen, A. L. Holmes, Jr., E. L. Hu, and S. P. DenBaars, Microelectron. Eng. 35, 95 (1997).
5. C.-H. Chen, D. L. Green, and E. L. Hu, J. Vac. Sci. Technol. B 13, 2355 (1995).
6. P. M. Petroff, C. Weisbuch, R. Dingle, A. C. Gossard, and W. Wiegmann, Proceedings of the Eighth Annual Conference on the Physics of Compound Semiconductor Interfaces, Williamsburg, VA, 1981 (unpublished), p. 571.
7. P. M. Petroff, C. Weisbuch, R. Dingle, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 38, 965 (1981).
8. D. L. Green, E. L. Hu, and N. G. Stoffel, J. Vac. Sci. Technol. B 12, 3311 (1994).
9. S. K. Ghandhi, VLSI Fabrication Principles (Wiley-Interscience, New York, 1983), p. 139.
10. C.-H. Chen, D. L. Green, E. L. Hu, J. P. Ibbetson, and P. M. Petroff, Appl. Phys. Lett. 69, 58 (1996).
11. C.-H. Chen, D. G. Yu, E. L. Hu, and P. M. Petroff, J. Vac. Sci. Technol. B 14, 3684 (1996).
12. D. V. Lang and L. C. Kimerling, Phys. Rev. Lett. 33, 489 (1974).