Comparing ion damage in GaAs and InP

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 95-98

  Yu, D G ^a   Chen, C H ^a   Holmes Jr , E L ^a   Hu, E L ^a   DenBaars, S P ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPUTER SIMULATION; CRYSTAL LATTICES; HETEROJUNCTIONS; ION BOMBARDMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ATOMIC DISPLACEMENT; CHANNELING DEPTH; ION DAMAGE; LOW TEMPERATURE PHOTOLUMINESCENCE MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031069487     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00163-3     Document Type: Article

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