Growth of Si1-xSnx layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 207-212

  Kobayashi, N ^a   Hasegawa, M ^a   Hayashi, N ^a   Katsumata, H ^a   Makita, Y ^a   Shibata, H ^a   Uekusa, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; OPTICAL PROPERTIES; PHASE EQUILIBRIA; PHOTOLUMINESCENCE; SILICON ALLOYS; SYNTHESIS (CHEMICAL); X RAY CRYSTALLOGRAPHY;

BINARY ALLOY SEMICONDUCTOR THIN FILMS; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION; LATTICE SITE OCCUPATION; NON THERMAL EQUILIBRIUM FABRICATION; PARTIAL STRAIN COMPENSATION; PHOTOLUMINESCENCE EMISSION; STRUCTURAL PROPERTIES;

SEMICONDUCTING FILMS;

EID: 0029717968     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)