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Volumn 9, Issue 1, 2008, Pages 25-29

Growth and photoluminescience properties for CuInSe2 epilayers made by a hot wall epitaxy method

Author keywords

Acceptor impurity; Band gap energy; CuInSe2 film; Optimum growth condition; Photoluminescience

Indexed keywords


EID: 41349115904     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (24)
  • 14
    • 0037298154 scopus 로고    scopus 로고
    • T.S. Jeong, P.Y. Yu, K.J. Hong, T.S. Kim, C.J. Youn, Y.D. Choi, K.S. Lee, B.O., and M.Y. Yoon, J. Cryst. Growth 249 (2003) 9-14.
    • T.S. Jeong, P.Y. Yu, K.J. Hong, T.S. Kim, C.J. Youn, Y.D. Choi, K.S. Lee, B.O., and M.Y. Yoon, J. Cryst. Growth 249 (2003) 9-14.
  • 20


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.