Control of intrinsic defects in molecular beam epitaxy grown CuInSe2

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1061-1064

  Niki, S ^a   Fons, P J ^a   Lacroix, Y ^a   Iwata, K ^a   Yamada, A ^a   Oyanagi, H ^a   Uchino, M ^a   Suzuki, Y ^a   Suzuki, R ^a   Ishibashi, S ^a   Ohdaira, T ^a   Sakai, N ^b   Yokokawa, H ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b NATL INST OF MAT AND CHEM RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; FILM GROWTH; MOLECULAR BEAM EPITAXY; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TWINNING;

COPPER INDIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0032642972     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01519-X     Document Type: Article

References (10)

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