MOVPE of epitaxial CuInSe2 on GaAs

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 169-174

  Rega, N ^a   Siebentritt, S ^a   Beckers, I ^a   Beckmann, J ^a   Albert, J ^a   Lux Steiner, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

A1. Defects; A1. Photoluminescence; A3. Metalorganic vapor phase epitaxy; B2. CuInSe2; B2. Semiconducting ternary compounds; B3. Solar cells

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; SINGLE CRYSTALS; SOLAR CELLS; THIN FILMS;

HORIZONTAL REACTORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291004     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01874-2     Document Type: Conference Paper

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