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Volumn 28, Issue 1, 2008, Pages 60-68

Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability

Author keywords

Caches; Dynamic memory; Process variation; Variability

Indexed keywords

COMPUTER ARCHITECTURE; DYNAMIC RANDOM ACCESS STORAGE; MICROPROCESSOR CHIPS; STATIC RANDOM ACCESS STORAGE;

EID: 41349100757     PISSN: 02721732     EISSN: None     Source Type: Journal    
DOI: 10.1109/MM.2008.12     Document Type: Article
Times cited : (32)

References (5)
  • 1
    • 39749179073 scopus 로고    scopus 로고
    • A 3-Transistor DRAM Cell with Gated Diode for Enhanced Speed and Retention Time
    • IEEE Press
    • W.K. Luk et al., "A 3-Transistor DRAM Cell with Gated Diode for Enhanced Speed and Retention Time," Proc. Symp. VLSI Circuits, IEEE Press, 2006, pp. 184-185.
    • (2006) Proc. Symp. VLSI Circuits , pp. 184-185
    • Luk, W.K.1
  • 2
    • 13144266757 scopus 로고    scopus 로고
    • A Process-Tolerant Cache Architecture for Improved Yield in Nanoscale Technologies
    • Jan
    • A. Agarwal et al., "A Process-Tolerant Cache Architecture for Improved Yield in Nanoscale Technologies," IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 13, no. 1, Jan. 2005, pp. 27-38.
    • (2005) IEEE Trans. Very Large Scale Integration (VLSI) Systems , vol.13 , Issue.1 , pp. 27-38
    • Agarwal, A.1
  • 5
    • 0035308547 scopus 로고    scopus 로고
    • The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability
    • Apr
    • A.J. Bhavnagarwala, X. Tang, and J.D. Meindl, "The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability," IEEE J. Solid-State Circuits, vol. 36, no. 4, Apr. 2001, pp. 658-665.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , Issue.4 , pp. 658-665
    • Bhavnagarwala, A.J.1    Tang, X.2    Meindl, J.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.