Photoluminescence energy trend for ground and excited states in InAs quantum dots in InGaAs/GaAs QW structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 2, 2007, Pages 272-275

  Lozada, E Velazquez ^a   Torchynska, T V ^a   Dybiec, M ^b   Ostapenko, S ^b   Eliseev, P G ^c   Stintz, A ^c   Malloy, K J ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INAS QUANTUM DOTS; INGAAS/GAAS; INTERNATIONAL CONFERENCES; NANO-DEVICES; PHOTOLUMINESCENCE ENERGY; PHOTOLUMINESCENCE STUDY;

EXCITED STATES; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41049094742     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673343     Document Type: Conference Paper

References (9)

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