Positive colossal magnetoresistance effect in ZnO La0.7 Sr0.3 Mn O3 heterostructure

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Jin, K X ^a   Zhao, S G ^b   Chen, C L ^a   Wang, J Y ^a   Luo, B C ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b XI'AN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COLOSSAL MAGNETORESISTANCE; INTERFACES (MATERIALS); LANTHANUM; ZINC OXIDE;

CARRIERS EFFECT; DEPLETION LAYERS; POSITIVE COLOSSAL MAGNETORESISTANCE; TEMPERATURE RANGE;

HETEROJUNCTIONS;

EID: 41049094365     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2900963     Document Type: Article

References (19)

1. R. Von. Helmholt, J. Wecker, B. Holzapfel, L. Schultz, and K. Samwer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.71.2331 71, 2331 (1993).
2. S. Jin, T. H. Tiefel, M. McCormack, R. A. Fashtnacht, R. Ramesh, and L. H. Chen, Science SCIEAS 0036-8075 10.1126/science.264.5157.413 264, 413 (1994).
3. K. X. Jin, C. L. Chen, S. L. Wang, Y. L. Wang, Y. C. Wang, and Z. M. Song, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1765863 96, 1537 (2004).
4. S. G. Zhao, K. X. Jin, and C. L. Chen, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2721842 101, 083701 (2007).
5. C. Zener, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.82.403 82, 403 (1951).
6. A. J. Millis, P. B. Littlewood, and B. I. Shraiman, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.175 77, 175 (1995).
7. H. B. Lu, S. Y. Dai, Z. H. Chen, Y. L. Zhou, B. L. Cheng, K. J. Jin, L. F. Liu, G. Z. Yang, and X. L. Ma, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1850192 86, 032502 (2005).
8. K. Zhao, Y. H. Huang, Q. L. Zhou, K. J. Jin, H. B. Lu, M. He, B. L. Cheng, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1943495 86, 221917 (2005).
9. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2002).
10. X. P. Zhang, B. T. Xie, Y. S. Xiao, B. Yang, P. L. Lang, and Y. G. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2011769 87, 072506 (2005).
11. H. Katsu, H. Tanaka, and T. Kawai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126595 76, 3245 (2000).
12. G. Van Tendeloo, O. I. Lebedev, M. Hervieu, and B. Raveau, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/67/8/R01 67, 1315 (2004).
13. A. Tiwari, C. Jin, D. Kumar, and J. Narayan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1605801 83, 1773 (2003).
14. K. Lord, D. Hunter, T. M. Williams, and A. K. Pradhan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2335406 89, 052116 (2006).
15. C. Mitra, P. Raychaudhuri, G. Kobernik, K. Dorr, K.-H. Muller, L. Schultz, and R. Pinto, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1409592 79, 2408 (2001); C. Mitra, P. Raychaudhuri, G. Kobernik, K. Dorr, K.-H. Muller, L. Schultz, and R. Pinto, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.90. 017202 90, 017202 (2003).
16. H. B. Lu, S. Y. Dai, Z. H. Chen, L. F. Liu, H. Z. Guo, W. F. Xiang, Y. Y. Fei, M. He, Y. L. Zhou, and G. Z. Yang, Chin. Phys. Lett. CPLEEU 0256-307X 10.1088/0256-307X/20/1/341 20, 137 (2003).
17. H. Guo, Y. Huang, K. Jin, Q. Zhou, H. Lu, L. Liu, Y. Zhou, B. Cheng, and Z. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1888039 86, 123502 (2005).
18. J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1664032 84, 1528 (2004).
19. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125353 75, 3366 (1999).