Effect of introducing gettering sites and subsequent Au diffusion on the thermal conductivity and the free carrier concentration in n -type 4H-SiC

Journal of Applied Physics

Volumn 103, Issue 5, 2008, Pages

  Kazan, M ^a   Ottaviani, L ^b   Moussaed, E ^c   Nader, R ^c   Masri, P ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; HELIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; THERMAL CONDUCTIVITY;

CHARGE CARRIER CONCENTRATION; GETTERING SITES; TEMPERATURE DENSITY;

GOLD;

EID: 40849136357     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841771     Document Type: Article

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