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Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

(9) Wang, W G a Han, K J b Yee, K J b Ni, C a Wen, Q c Zhang, H W c Zhang, Y a,d Shah, L a Xiao, John Q a

a UNIVERSITY OF DELAWARE (United States)

b Chungnam National University (South Korea)

c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

d Massachusetts Institute of Technology Cambridge

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; DEPOSITION; DICHROISM; MAGNETIZATION; MAGNETOMETERS; MAGNETRON SPUTTERING; SEMICONDUCTING TELLURIUM; SQUIDS;

SEMICONDUCTOR BEHAVIORS; SUBSTITUTIONAL CR IONS; TRANSPORT MEASUREMENT; ZINC BLENDE;

SEMICONDUCTOR DEVICES;

EID: 40849088248 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2890087 Document Type: Article

Times cited : (8)

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