Building semiconductor nanostructures atom by atom

Microelectronics Journal

Volumn 39, Issue 3-4, 2008, Pages 318-326

  Korkusinski, M ^a   Hawrylak, P ^a   Zielinski, M ^a   Sheng, W ^a,b   Klimeck, G ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b FUDAN UNIVERSITY   (China)

^c Purdue University   (United States)

Author keywords

Artificial molecule; Atomistic calculations; Tight binding model

Indexed keywords

ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; MOLECULAR ORBITALS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; STRAIN;

ARTIFICIAL MOLECULE; ATOMISTIC CALCULATIONS; ELECTRONIC BONDING; TIGHT-BINDING MODELS;

NANOSTRUCTURES;

EID: 40749161936     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.016     Document Type: Article

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