Impurity states in a spherical GaAs-Ga1 - x AlxAs quantum dots: Effects of hydrostatic pressure

Microelectronics Journal

Volumn 39, Issue 3-4, 2008, Pages 383-386

  Perez Merchancano, S T ^a   Franco, R ^b   Silva Valencia, J ^b  

^a UNIVERSIDAD DEL CAUCA   (Colombia)

^b UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

Author keywords

GaAs; Hydrostatic pressure; Impurities; Quantum dots

Indexed keywords

APPROXIMATION ALGORITHMS; BINDING ENERGY; HYDROSTATIC PRESSURE; IMPURITIES; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

ACCEPTORS; MASS APPROXIMATION; SHALLOW DONORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 40649124805     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.012     Document Type: Article

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