The role of surface roughness on the electron confinement in semiconductor quantum rings

Microelectronics Journal

Volumn 39, Issue 3-4, 2008, Pages 455-458

  Chaves, A ^a   Costa e Silva, J ^a   Freire, J A K ^a   Farias, G A ^a  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Aharonov Bohm effect; Interface roughness; Quantum rings

Indexed keywords

ANGULAR MOMENTUM; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; NUMERICAL METHODS; PERTURBATION TECHNIQUES; SURFACE ROUGHNESS;

AHARONOV-BOHM EFFECT; ELECTRON CONFINEMENT; INTERFACE ROUGHNESS; QUANTUM RINGS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 40649116711     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.019     Document Type: Article

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