Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 137-142

  Iwaya, M ^a   Okadome, Y ^a   Tsuchiya, Y ^a   Iida, D ^a   Miura, A ^a   Furukawa, H ^a   Honshio, A ^a   Miyake, Y ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; GALLIUM NITRIDE; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

ALN MOLAR FRACTION; BIAXIAL STRAIN; BIAXIAL STRESSES;

HETEROJUNCTIONS;

EID: 33646399756     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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