Degradation mechanism of polysilicon TFTs under DC stress

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 677-680

  Kato, N ^a   Yamada, T ^a   Yamada, S ^a   Nakamura, T ^a   Hamano, T ^a  

^a FUJI XEROX CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; THERMAL CONDUCTIVITY; THRESHOLD VOLTAGE;

DC STRESS; DEGRADATION MECHANISM; GATE STRESS; HIGH TEMPERATURE; POLYSILICON THIN FILM TRANSISTORS; QUARTZ SUBSTRATE; TEMPERATURE RISE;

THIN FILM TRANSISTORS;

EID: 84951344680     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307451     Document Type: Conference Paper

References (5)

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2. I. Asai, N. Kato et. al., Extended Abstracts of the International Conference on Solid State Devices and Materials, pp. 55-57, 1992.
3. M. J. Powell, Applied Physics Letters 43 pp. 597-593, 1983.
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5. M. J. Powell, J. Non-cryst. Solids 114 pp. 642, 1989.