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Volumn 85, Issue 3, 2004, Pages 384-386
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Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BINDING ENERGY;
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
CRYSTAL GROWTH FROM MELT;
ELECTRON IRRADIATION;
FERMI LEVEL;
HOLE MOBILITY;
IONIZATION;
MICROSTRUCTURE;
POSITRONS;
SEMICONDUCTOR DOPING;
SPECTROSCOPIC ANALYSIS;
ACCEPTORS;
IONIZATION ENERGY;
POSITRON LIFETIME SPECTROSCOPY (PLS);
TEMPERATURE DEPENDENT HALL (TDH) MEASUREMENTS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 4043160510
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1773934 Document Type: Article |
Times cited : (41)
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References (13)
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