Surface treatment and layer structure in 2H-GaN grown on the (0001) Si surface of 6H-SiC by MBE

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Ruterana, P ^a   Vermaut, Philippe ^a   Nouet, G ^a   Salvador, A ^b   Morkoc H ^b  

^a CNRS   (France)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; PLASMAS; SAMPLING; SILICON CARBIDE;

EPILAYERS; HEXAGONAL SYMMETRY; LAYER STRUCTURES; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 4043123265     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000168x     Document Type: Article

References (10)

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7. P. Vermaut, P. Ruterana, G. Nouet, unpublished (1997).
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