Ultrashort optical pulse generation with a mode-locked long-wavelength (1075-1085 nm) InGaAs-GaAs semiconductor laser

IEEE Photonics Technology Letters

Volumn 16, Issue 8, 2004, Pages 1798-1800

  Brennan, Michael J ^a   Budz, Andrew J ^a   Robinson, Brad J ^a   Mascher, Peter ^a   Haugen, Harold K ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; LASER MODE LOCKING; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; ULTRASHORT PULSES;

EXTERNAL LINEAR CAVITY; GAS SOURCE MOLECULAR BEAM EPITAXY; OPTICAL PULSE COMPRESSION; ULTRASHORT OPTICAL PULSE GENERATION;

SEMICONDUCTOR LASERS;

EID: 4043097037     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.831320     Document Type: Article

References (13)

1. R. G. Waters, P. K. York, K. J. Beernink, and J. J. Coleman, "Viable strained-layer laser at λ = 1100 nm," J. Appl. Phys., vol. 67, pp. 1132-1134, Jan. 1990.
2. A. Ishihara and H. Watanabe, "Long-wavelength (1072 nm) strained InGaAs quantum-well lasers grown on 1.0° misoriented (111)B GaAs," Jpn. J. Appl. Phys., vol. 33, pp. 1361-1362, Mar. 1994.
3. N. K. Dutta, W. S. Hobson, D. Vakhshoori, H. Han, P. N. Freeman, J. F. de Jong, and J. Lopata, "Strain compensated InGaAs-GaAsP-InGaP laser," IEEE Photon. Technol. Lett., vol. 8, pp. 852-854, July 1996.
4. D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, "1.17 μm highly strained GaInAs-GaAs quantum-well laser," IEEE Photon. Technol. Lett., vol. 11, pp. 946-948, Aug. 1999.
5. H. Asano, M. Wada, T. Fukunaga, and T. Hayakawa, "Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes," Appl. Phys. Lett., vol. 74, pp. 3090-3092, May 1999.
6. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, and U. Zeimer, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett., vol. 79, pp. 1965-1967, Sept. 2001.
7. T. Piwonski, P. Sajewicz, J. M. Kubica, M. Zbroszczyk, K. Reginski, B. Mroziewicz, and M. Bugajski, "Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy," Microwave Opt. Technol. Lett., vol. 29, pp. 75-77, Apr. 2001.
8. N. Tansu and L. J. Mawst, "High-performance strain-compensated InGaAs-GaAsP-GaAs (l = 1.17 μm) quantum-well diode lasers," IEEE Photon. Technol. Lett., vol. 13, pp. 179-181, Mar. 2001.
9. L. W. Sung and H. H. Lin, "Highly strained 1.24 μm InGaAs/GaAs quantum-well lasers," Appl. Phys. Lett., vol. 83, pp. 1107-1109, Aug. 2003.
10. B. Ortac, A. Hideur, T. Chartier, M. Brunel, C. Ozkul, and F. Sanchez, "90-fs stretched-pulse ytterbium-doped double-clad fiber laser," Opt. Lett., vol. 28, pp. 1305-1307, Aug. 2003.
11. O. G. Okhotnikov, L. Gomes, N. Xiang, T. Jouhti, and A. B. Grudinin, "Mode-locked ytterbium fiber laser tunable in the 980-1070 nm spectral range," Opt. Lett., vol. 28, pp. 1522-1524, Sept. 2003.
12. A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, "Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power," Appl. Phys. Lett., vol. 80, pp. 3892-3894, May 2002.
13. M. J. Brennan, J. N. Milgram, P. Mascher, and H. K. Haugen, "Wave-length tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser," Appl. Phys. Lett., vol. 81, pp. 2502-2504, Sept. 2002.