Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

Microwave and Optical Technology Letters

Volumn 29, Issue 2, 2001, Pages 75-77

  Sajewicz, P ^a   Kubica, J M ^a   Zbroszczyk, M ^a   Reginski K ^a   Mroziewicz, B ^a   Bugajski, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Laser diodes; Strained layer semiconductor lasers

Indexed keywords

CAVITY RESONATORS; LASER OPTICS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

STRAINED-LAYER SEMICONDUCTOR LASERS;

QUANTUM WELL LASERS;

EID: 0035917917     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.1087     Document Type: Article

References (4)

1. Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam
2. Viable strained-layer laser at λ = 1100 nm
3. Long-wavelength (1072 nm) strained InGaAs quantum-well lasers grown on 1.0° misoriented (111)B GaAs