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Volumn 103, Issue 4, 2008, Pages

Influence of 100 MeV oxygen ion irradiation on Nin-Si (100) Schottky barrier characteristics

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ION BOMBARDMENT; LEAKAGE CURRENTS; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES; SILICON;

EID: 40149102368     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2885061     Document Type: Article
Times cited : (16)

References (14)
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    • APPLAB 0003-6951 10.1063/1.1655287.
    • J. M. Shannon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1655287 25, 75 (1974).
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    • 0016048296 scopus 로고
    • APPLAB 0003-6951 10.1063/1.1655220.
    • J. M. Shannon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1655220 24, 369 (1974).
    • (1974) Appl. Phys. Lett. , vol.24 , pp. 369
    • Shannon, J.M.1
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    • APPLAB 0003-6951 10.1063/1.96133.
    • R. Singh and S. Ashok, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.96133 47, 426 (1985).
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 426
    • Singh, R.1    Ashok, S.2
  • 10
    • 40149099108 scopus 로고
    • Metal-Semiconductor Contacts, 2nd ed. (Claredon, Oxford).
    • E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Claredon, Oxford, 1988).
    • (1988)
    • Rhoderick, E.H.1    Williams, R.H.2
  • 11
  • 12
    • 34249887923 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.2733611.
    • M. Y. Ali and M. Tao, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2733611 101, 103708 (2007).
    • (2007) J. Appl. Phys. , vol.101 , pp. 103708
    • Ali, M.Y.1    Tao, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.