An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 161-172

  Ahrenkiel, R K ^a   Johnston, S W ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Contactless; Deep level impurities; Defect characterization; Minority carrier mobility; RCPCD; Recombination lifetime

Indexed keywords

CARRIER MOBILITY; IMPURITIES; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS;

RECOMBINATION LIFETIME;

DEFECTS;

EID: 0042431978     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00639-6     Document Type: Conference Paper

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