104Gb/s 211-1 and 110Gb/s 29-1 PRBS generator in InP HBT technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2006, Pages

  Kjellberg, Torgil ^a   Hallin, Joakim ^a   Swahn, Thomas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DATA TRANSFER; ENERGY DISSIPATION; INDIUM PHOSPHIDE; PARALLEL PROCESSING SYSTEMS; TIMING CIRCUITS;

DATA RATE; PARALLEL OUTPUTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 39749179142     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. Hallin, T. Kjellberg and T. Swahn, "A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology," IEEE Comp. Semiconductor IC Symp., pp. 260-263, Oct., 2005.
2. 11-1 PRBS Generators in SiGe Bipolar Technology," IEEE Comp. Semiconductor IC Symp., pp. 219-222, Oct., 2004.
3. 31-1 PRBS Generator in SiGe BiCMOS Technology," ISSCC Dig. Tech. Papers, pp. 342-343, Feb., 2005.
4. max Over 300 GHz in a New Manufacturable Technology," IEEE Electron Device Letters, vol. 25, pp. 520-522, Aug., 2004.
5. M. Bussmann, et al., "PRBS Generation and Error Detection Above 10 Gb/s Using a Monolithic Si Bipolar IC," J. Lightwave Technology, vol 12, pp. 353-360, Feb., 1994.
6. M. Chen and J. Notthoff, "A 3.3-V 21-Gb/s PRBS Generator in AlGaAs/GaAs HBT Technology," IEEE J. Solid State Circuits, vol. 35, pp. 1266-1270, Sept., 2000.