A new model of subthreshold swing for sub-100 nm MOSFETs

Microelectronics Reliability

Volumn 48, Issue 3, 2008, Pages 342-347

  Yang, Lin An ^a   Yu, Chun Li ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; BICMOS TECHNOLOGY; CIRCUIT SIMULATION; DRAIN CURRENT; GATE DIELECTRICS; MATHEMATICAL MODELS;

GATE OVERDRIVE VOLTAGE; SINGLE EQUATION I-V COMPACT MODEL; SUBTHRESHOLD SWING MODELS; VOLTAGE BASED COMPACT MODELS;

MOSFET DEVICES;

EID: 39449105426     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.06.007     Document Type: Article

References (10)

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