Embedded non volatile memories in deep-submicron CMOS

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 127-134

  Baldi, L ^a   Maurelli, A ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUB-MICRON PROCESS; DEEP SUBMICRON CMOS; FEATURE SIZES; GENERAL TRENDS; LEVEL OF INTEGRATIONS; NON-VOLATILE MEMORY; PROCESS COMPLEXITY;

DATA STORAGE EQUIPMENT;

EID: 84907891566     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. F. Berenga, V. Daniele, G. Feria, G. Tore, W. Mienner, LHaraszti, P. Sieber, "E2PROM TV synthesizer", Digest of Technical Papers of 1978 1SSCC, pp. 196-197 (1978).
2. T. Iizuka, "Embedded Memory: a Key to High Performance System VLSIs", Digest of Technical Papers of 1990 Symp. on VLS1 Circuits, p.1-4, (1990).
3. J.L. Putscher, "MCU Market Analysis with End-Use Consumption", Cahners In-Stat Group, (1998).
4. H.E. Maes, J. Witters and G. Groeseneken, "Trends in Non Volatile Memory Devices and Technologies", Proceedings of ESSDERC 1987, p.743-754, (1987).
5. R. Moazzami and C. Hu, "Stress-Induced Current in Thin Silicon Dioxide Films", 1EDM Technical Digest 1992, p.139, (1992)
6. P. Cappelletti and A. Modelli, "Flash Memory Reliability", Appendi to the Proceedings of ESSDERC '98, (1998).
7. L. Baldi, A. Cascella and B. Vajana, "A Scalable Single Poly EEPROM Cell for Embedded Memory Applications", Microel. Jour. 28, p.657-661 (1997).
8. W. Kinney and F. Gealy, "Memory Applications of Integrated Feroelectic Technology", Digest of Technical Papers, 1SSCC 1994, p.266 (1994).
9. M. Alavi, M. Bohr, I. Hicks, M. Denham, A. Cassens, D. Douglas and M.-C. Tsai, "A PROM Element based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process", Technical Digest of 1EDM 1997, p.855-858 (1997)