Novel Al2O3 capacitor for high density DRAMs

ICVC 1999 - 6th International Conference on VLSI and CAD

Volumn , Issue , 1999, Pages 506-509

  Lim, J S ^a   Kim, Y K ^a   Choi, S J ^a   Lee, J H ^a   Kim, Y S ^a   Lee, B T ^a   Park, H S ^a   Park, Y W ^a   Lee, S I ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3943097799     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICVC.1999.820987     Document Type: Conference Paper

References (3)

1. Y. Kim, S. M. Lee, I. S. Park, C. S. Park, S. I. Lee, M. Y. Lee, Symp. on VLSI Tech., 52 (1998).
2. Y. Kim, S. M. Lee, I. S. Park, C. S. Park, S. I. Lee, M. Y. Lee, Appl. Phys. Lett.,25(71), 3604 (1997).
3. S. R. Pollack, et. al., Trans. AIME, 497(1965).