1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime

Electronics Letters

Volumn 44, Issue 4, 2008, Pages 290-291

  Strittmatter, A ^a   Germann, T D ^a   Pohl, J ^a   Pohl, U W ^a   Bimberg, D ^a   Rautiainen, J ^b   Guina, M ^b   Okhotnikov, O G ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; OPTICAL PUMPING; SEMICONDUCTING INDIUM COMPOUNDS; VAPOR PHASE EPITAXY; WAVELENGTH;

CAVITY RESONANCE; STRANSKI-KRASTANOW REGIME;

SEMICONDUCTOR QUANTUM DOTS;

EID: 39349097506     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083131     Document Type: Article

References (12)

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