Photoluminescence from (0 0 0 1) GaN grown by the acidic ammonothermal technique

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 896-899

  Fujii, Katsushi ^a   Fujimoto, Gakuyo ^a   Goto, Takenari ^a   Yao, Takafumi ^a,b   Kagamitani, Yuji ^a   Hoshino, Naruhiro ^a   Ehrentraut, Dirk ^a   Fukuda, Tsuguo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Optical properties; A2. Ammonothermal crystal growth; B1. Gallium nitride

Indexed keywords

CRYSTAL GROWTH; EXCITONS; GALLIUM NITRIDE;

AMMONOTHERMAL TECHNIQUE; EXCITONIC EMISSION;

PHOTOLUMINESCENCE;

EID: 39249084016     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.060     Document Type: Article

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